Cambridge, UK, 9 June 2026 – Cambridge GaN Devices (CGD), a global leader in innovative GaN (Gallium Nitride)-based power devices, joins forces with NXP® Semiconductors to accelerate time to market in data centre and automotive markets.
These high-growth markets represent a huge opportunity for GaN. The International Energy Agency expects the energy used by data centres to double by 20301 making energy efficiency improvements a key imperative. It is forecasted that the data centre power semiconductor market will see a CAGR of 11.0% reaching global sales of USD 4.29 billion by 20322 while ResearchandMarkets.com have forecasted that the electric vehicle (EV) traction inverter market will see a CAGR of 16.1%, reach global sales of USD 67.6 billion in 20343.
This new long-term collaboration will enable NXP to develop GaN-based system solutions, leveraging CGD’s advanced GaN products, early access to next-generation CGD GaN developments, and the team’s extensive expertise in GaN processes and technologies. At the same time, CGD will benefit from access to NXP’s broad processor and analog product portfolios, system know-how and global commercial reach, accelerating market penetration through optimised system-level solutions.
Read the full release here.